徐小波

徐小波，男，副教授，硕士生导师。先后在合肥工业大学、西安电子科技大学攻读学士、硕士和博士学位。2012年4月至今在长安大学电子与控制工程学院从事教学科研工作。在教学方面，指导学生参加电子竞赛获陕西省一等奖1次，国家二等奖1次，主持教改项目1项；在科研方面，主持国家自然科学基金、博士后科学基金、陕西省自然科学基金各1项，参与项目多项。和他人合作获发明专利2项。在IEEE Transactions on Electrons Devices、Solid State Electronics、Superlattices and Microstructures、Chinese Physics B、Chinese Physics Letters等期刊公开发表第一作者学术论文20多篇，其中13篇SCI收录(二区1篇，三区8篇，四区4篇)，6篇EI收录，担任IEEE Microwave and Wireless Components Letters、Journal of Physics and Chemistry of Solids、International Journal of Electronics等国外顶级期刊审稿人。

主要研究领域或方向：光伏发电领域中的核心电学参数提取及优化算法研究（人工智能算法在太阳能电池和组件参数评估中的应用，python实现），电路设计领域中的SPICE模型参数建模及可靠性算法分析。、

Xiao-Bo Xu，Wen-Ping Gu, Si Quan, Zan Zhang, Lin Zhang. Early effect of box, triangular and trapezoidal Ge profiles for SiGe HBTs. Superlattices and Microstructures, 2017. 603-609 (SCI JCR三区 IF: 2.123)

Xiao-Bo Xu，Xiao-Yan Wang, Wen-Ping Gu, Si Quan, Zan Zhang. Study on influences of CdZnS buffer layer on CdTe solar cells. Superlattices and Microstructures, 109, 2017, 463-469 (SCI JCR三区 IF: 2.123)

Xiaobo Xu，Xiaoyan Wang, Wenping Gu, Si Quan. Current Crowding Effect of Equilateral Polygon Emitter Transistors. IEEE Transactions on Electron Devices，64(6), 2017, 2770-2772. (SCI JCR 二区 IF: 2.605 )

徐小波，张林，王晓艳, 谷文萍，胡辉勇, 葛建华， Si和SiGe三极管Early效应电路仿真模型综述，电子学报， 44(7)，2016, pp 1763-1771 ( EI)

徐小波,王晓艳, 谷文萍, 张林, 全思, 葛建华, 低光强下CdTe太阳电池的性能研究. 半导体光电, 37(6), 2016, pp 796-799.

徐小波，王晓艳，李艳波，胡辉勇，葛建华, SOI SiGe HBT集电结渡越时间模型研究，微电子学, 45(5)， 2015， pp 681-684.

Xu Xiao-Bo, Zhang Bin, Yang Yin-Tang, and Li Yue-Jin, An analytical model of SiGe heterojunction bipolar transistors on SOI substrate for large current situation, Chinese Physics Letters, 2013, 30(2): 028502-1~4; (SCI: 000315217000060 JCR四区 IF: 0.8)

Xiao-Bo Xu He-Ming Zhang, Hui-Yong Hu, and Jiang-Tao Qu, Early effect of SiGe heterojunction bipolar transistors, Solid State Electronics, 2012, 72(6): 1-3; (SCI: 000304585400001 JCR 三区 IF: 1.58)

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, Ma Jian-Li), and Xu Li-Jun, Analytical base–collector depletion capacitance in vertical SiGe heterojunction bipolar transistors fabricated on CMOS-compatible silicon on insulator, Chinese Physics B, 2011 20(1): 018502-1~5; (SCI: 000286676000102 JCR 三区 IF: 1.223)

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, and Ma Jian-li, Early effect modeling of silicon-on-insulator SiGe heterojunction bipolar transistors, Chinese Physics B, 2011 20(5): 058502-1~6; (SCI: 000290665200075 JCR 三区: 1.223)

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, and Qu Jiang-tao, Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin film silicon-on-insulator, Chinese Physics B, 2011 20(5): 058503-1~5; (SCI: 000290665200076 JCR 三区: 1.223)

Xu Xiao-Bo, and Zhang He-Ming, An analytical avalanche multplcation model for partially depleted silicon-on-insulator SiGe heterojunction bipolar transistors, Chinese Physics letters, 2011 28(7): 078505-1~4; (SCI: 000293141800088 JCR 四区: 0.8)

Xu Xiao-Bo, Xu Kai-Xuan, Zhang He-Ming, and Qin Shan-Shan A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects, Chinese Physics B, 2011 20(9): 098501-1~5; (SCI: 000295964200078 JCR 三区: 1.223)

Xu Xiao-Bo, Zhang He-Ming, Hu Hui-yong, Li Yu-Chen, and Qu Jiang-Tao, Weak avalanche multiplication in SiGe HBTs on thin film SOI, Chinese Physics B, 2011 20(10): 108502-1~6; (SCI: 000295969000077 JCR 三区: 1.223)

Xiaobo Xu, Heming Zhang, Huiyong Hu, Jianli Ma, and Lijun Xu, Generalized Early voltage model of bipolar transistors for linearly graded germanium in base, Applied Mechanics and Materials, 2012 110-116: 3311-3315; (EI)

Xiaobo Xu, Heming Zhang, Huiyong Hu, Shanshan Qin, and Jiangtao Qu, Collector resistance of accumulation-subcollector transistors for SOI SiGe BiCMOS technology, Applied Mechanics and Materials, 2012 110-116: 5452-5456; (EI)

徐小波，张鹤鸣，胡辉勇，许立军，马建立，SOI部分耗尽SiGe HBT 集电结空间电荷区模型，物理学报，2011 60(7): 078502-1~9; (SCI: 000293366300119 JCR 四区: 1.013)

徐小波，张鹤鸣，胡辉勇，SOI部分耗尽SiGe HBT 集电结耗尽电荷和电容改进模型，物理学报，2011 60(11): 118501-1~5; (SCI: 000298442100115 JCR 四区: 1.013)

Xiaobo Xu, Kaixuan Xu, and Heming Zhang, Collector depletion region investigation of SOI SiGe HBTs, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 2039-2043; (EI)

Xiaobo Xu, Heming Zhang, Huiyong Hu, Jiangtao Qu, Jianli Ma, and Shanshan Qin, Negative substrate bias effects on collector resistance in SiGe HBTs on thin film SOI, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 2380-2382; (EI)

Xiaobo Xu, Heming Zhang, Huiyong Hu, Jiangtao Qu, and Jianli Ma, Weak avalanche multiplication model for fully depleted silicon-on-insulator SiGe heterojunction bipolar transistors, IEEE 2010 International Conference on Modeling, Simulation and Control (ICMSC 2010), Cairo, Egypt, 2010.11; (EI)

Qin Shan-Shan, Zhang He-Ming, Hu Hui-Yong, Wang Guan-Yu, Wang Xiao-Yan, Xu Xiao-Bo, and Qu Jiang-Tao, A two-dimensional subthreshold current model for strained-Si MOSFET, Science in China: Series G，2011, 54(12): 21811~2185; (SCI: 000297361000011)

Qin Shanshan Zhang Heming, Hu Huiyong, Xu Xiaobo, and Wang Xiaoyan, An analytical model for the subthreshold current of fully depleted strained-SOI MOSFET , Applied Mechanics and Materials, 2012, 110-116: 3332-3337; (EI)

Song Jian Jun, Shan Heng Sheng, Zhang He Ming, Hu Hui Yong, Wang Guan Yu, Ma Jian Li, Xu Xiao Bo, Model of DOS near the top of valence band in strained SiGex/(001)Si, Recent Trends in Materials and Mechanical Engineering Materials, Mechatronics and Automation, 2011, 55-57: 979-982; (EI)

Qu Jiangtao, Zhang, Heming, Hu, Huiyong, Xu, Xiaobo, Wang, Guan-Yu, and Wang, Xiao-Yan, The impact of Drain-Induced Barrier Lowering effect on threshold voltage for small-scaled strained Si/SiGe nMOSFET, Applied Mechanics and Materials, 2012, 110-116: 5457-5463; (EI)

Qu Jiang Tao, Zhang He Ming, Xu Xiao Bo, and Qin Shan Shan, Study of Drain Induced Barrier Lowering(DIBL) effect for strained Si Nmosfet, Procedia Engineering, 2011, 16: 298-305; (EI)

Qu Jiang-Tao, Zhang He-Ming, Qin Shan-Shan, Xu Xiao-Bo, and Hu Hui-Yong, Study of threshold voltage modeling for small-scaled strained Si nMOSFET, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 4507-4510; (EI)

屈江涛，张鹤鸣，秦珊珊，徐小波，王晓艳，胡辉勇，小尺寸应变Si NMOSFET物理模型的研究，物理学报，2011，60(9): 098501-1~7; (SCI: 000295114000113)

屈江涛，张鹤鸣，胡辉勇，徐小波，王晓艳，小尺寸应变Si/SiGe PMOSFET阈值电流电压特性的研究，电子科技大学学报, 2012, 41(2): 311-316；(EI)

张滨，杨银堂，李跃进，徐小波，SOI SiGe HBT电学性能研究，物理学报，2012, 61(23), 238502-1~9; (SCI index source)

Jian-Li Ma, He-Ming Zhang, Jian-Jun Song, Qun Wei, Xiao-Yan Wang, Guan-Yu Wang, and Xiao-Bo Xu, Energy Band Structure of Silicon Under Uniaxial Stress in the (110) Plane Along an Arbitrary Direction, Chinese Journal of Physics 2011, 49(6): 1244~1254; (SCI: 000299878200012)

马建立，张鹤鸣，宋建军，王晓艳，王冠宇，徐小波，单轴<111>应力硅价带结构计算，物理学报 2011，60(8): 087101-1~8 (SCI: 000294392400077);

Jian-Li Ma, He-Ming Zhang, Xiao-Yan Wang, Qun Wei, Guan-Yu Wang and Xiao-Bo Xu, Valence band structure and hole effective mass of uniaxial stressed Germanium, Journal of Computational Electronics, 2011, 10(4): 388-393; (EI)

Ma Jianli, Zhang Heming, Song Jianjun, Wang Guanyu, Wang Xiaoyan, and Xu Xiaobo. Impact of /(001) uniaxial stress on valence band structure and hole effective mass of silicon, 2011, Journal of Semiconductors, 32(2): 022002-1~5; (EI)

Xu Li-Jun, Zhang He-Ming, Hu Hui-Yong, Xu Xiao-Bo, and Ma, Jian-Li, The study of direct tunneling current in strained MOS device with silicon nitride stack gate dielectric, Applied Mechanics and Materials, 2012, 110-116: 5442-5446; (EI)

Xu Li-Jun, Zhang He-Ming, Hu Hui-Yong, Xu Xiao-Bo, and Ma, Jian-Li, The study of parallel strain distribution in channel of PMOSFET with silicon-germanium source and drain regions, IEEE 2011 International Conference on Electric Information and Control Engineering (ICEICE 2011), Wu Han, China, 2011.04, 4677-4680; (EI)

Yuchen Li, Heming Zhang, Huiyong Hu, Xiaobo Xu, Chunyu Zhou, and Bin Wang, A Compact Threshold Voltage Model for the Novel High-Speed Semiconductor Device IMOS, 2011 International Conference of Electron Devices and Solid-State Circuits (EDSSC 2011), 2011, 1-2；(EI)

李妤晨，张鹤鸣，张玉明，胡辉勇, 徐小波,秦珊珊，王冠宇，新型高速半导体器件IMOS阈值电压解析模型，物理学报，2012，61(4)：047303-1~5；(SCI: 000301563800068)^[1]