胡晓东

胡晓东，北京大学物理学院教授，博士生导师，先后毕业于北京大学、清华大学、电子科技大学。^[1]

1978.2-1982.1北京大学物理系，获学士学位。

1989.8获清华大学硕士学位。

1992.12获得电子科技大学物理学与光电子学博士学位。

1993.1-1995.7清华大学博士后流动站。

1995.8-2005.8北京大学物理系副教授。

1998.7-2000.7美国德克萨斯大学奥斯丁分校，Research Fellow。

2000.7-2001.4美国堪萨斯州立大学 Associate Researcher。

2005.8-教授,，博士生导师，北京大学物理学院,，北京大学宽禁带半导体研究中心。

光电子物理和器件研究。近期工作主要是GaN基短波长激光器的研制和相应的物理研究。

本科生《基础物理》主讲。

主持国家863计划课题《氮化镓基短波长激光器创新结构和关键技术》，2007.12-2010.11

主持国家自然科学基金项目《GaN基量子异质结构和发光性质》，2008.1-2010.12

参与国家重大科学研究计划课题《受限半导体量子体系调控及光学、输送性质研究》2006.09-2008.8

Wei Yang and Xiaodong Hu，Comment on ‘‘Plasmon-Enhanced Ultraviolet Photoluminescence from Hybrid Structures of Graphene/ZnO Films’’, 107, 159701 (2011) , Physical Review Letters

Lei Wang, Cimang Lu, Jianing Lu, Lei Liu, Ningyang Liu, Yujie Chen, Yanfeng Zhang, Erdan Gu, and Xiaodong Hu*, Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes，18 July 2011，Vol. 19, No. 15 / Optics Express 14182

Lei Liu, Lei Wang, Ding Li, Ningyang Liu, Weihua Chen, ZheChuan Feng, Weimin Du and Xiaodong Hu*, Influence of Indium Composition in the Prestrained InGaN Interlayer on the Strain Relaxation of InGaN/GaN Multiple Quantum Wells in Laser Diode Structures，Journal of Applied Physics, 109 073106 (2011)

Wang Yu-Zhou, Li Ding, Li Lei, Liu Ningyang, Liu Lei, Cao Wen-Yu, Chen Wei-Hua, and Xiaodong Hu*, Intersubband transitions in Al0.82In0.18N/GaN single quantum well,, Chin. Phys. B, Vol.20, No. 9 (2011) 094207

Lei Wang, Rui Li, Ding Li, Ningyang Liu, Lei Liu, Weihua Chen, Cunda Wang, Zhijian Yang, and Xiaodong Hu, Strain modulation-enhanced Mg acceptor activation efficiency of Al0.14Ga0.86N/GaN superlattices with AlN interlayer, Applied Physics Letters, 96(06)061110, 2010

Ziwen Yang, Rui Li, Tao Yu, Yanzhao Zhang, Weihua Chen, Xiaodong Hu*, Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field, Applied Physics Letters, 94(6), 061120 (2009)

Li, R; Zhang, JM; Chen, L; Zhao, HB; Yang, ZW; Yu, T; Li, D; Liu, ZC; Chen, WH; Yang, ZJ; Zhang, GY; Gan, ZZ; Hu, XD*; Wei, QY; Li, T; Ponce, FA, Donor-related cathodoluminescence of p-AlGaN electron blocking layer embedded in ultraviolet laser diode structure, Applied Physics Letters, 94(21)211103, 2009

Lei Wang, Rui Li, Ziwen Yang, Ding Li, Tao Yu, Ningyang Liu, Lei Liu, Weihua Chen, and Xiaodong Hu*, High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes, APPLIED PHYSICS LETTERS 95 (21), 211104, 2009

D Zhang, Z C Liu and X D Hu* Improved Multi-layer Stopper in the GaN-based Laser Diode, Semicond. Sci. Technol. 24 (2009) 045003 (5pp)

W. H. Chen, X. D. Hu,X. D. Shan, X. N. Kang, X. R. Zhou, X. M. Zhang, T. J. Yu, K. Xu, Z. J. Yang, G. Y. Zhang , Shock-assisted superficial hexagonal-to-cubic phase transition in GaN/sapphire interface induced by ultra-violet laser lift-off, Chinese Physics Letters, Vol. 26, 016203 (2009)

GAO Ting-Ge, YI Jue-Min, ZHOU Zi-Yao, HU Xiao-Dong* First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride Chinese Physics Letters, 2008, Vol.25, No.8, 2989-2992